Telluride Targets

To meet cutting edge RD needs or large production requirements, AEMProduct offers a full range of product and service solutions for high-purity PVD sputtering targets or evaporation materials. We also have an experienced technical team developing innovative new products. AEMProduct provides Ceramic

Advanced Engineering Materials customized target products made of high purity raw material powder with super fine grain size, together with the distinguished homogeneous microstructure to achieve desired characteristics of sputtering deposited thin film and the longer life for target. AEMProduct pro

Advanced Engineering Materials (AEMProduct) is a leading manufacturer of high-purity, thin film deposition materials used in the semiconductor, data storage, LED, wireless, aerospace defense, photonics and life sciences markets. We deliver materials, matched in their quality parameters in an optimal

Cadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium. It is mainly used as the semiconducting material in cadmium telluride photovoltaics and an infrared optical window. It is usually sandwiched with cadmium sulfide to form a P-N junction solar PV cell. Typical

General Germanium telluride (GeTe) is a chemical compound of germanium and tellurium and is a component of chalcogenide glasses. It shows semimetallic conduction and ferroelectric behaviour.Germanium telluride exists in three major crystalline forms, room-temperature rhombohedral and orthorhombic st

Lead telluride is a compound of lead and tellurium (PbTe). It crystallizes in the NaCl crystal structure with Pb atoms occupying the cation and Te forming the anionic lattice. It is a narrow gap semiconductor with a band gap of 0.32 eV. It occurs naturally as the mineral altaite. Material Notes Lead

Manganese telluride is an inorganic compound with the formula MnTe2.It can be produces by the fusion of manganese and tellurium in a vacuum.The oxidation of manganese in the manganese dioxide is about +2, and the tellurium is present as a dimeric anion (Te2(2-)). Material Notes Manganese Telluride S

Molybdenum(IV) telluride is a compound of molybdenum and tellurium with formula MoTe2, corresponding to a mass percentage of 27.32% molybdenum and 72.68% tellurium. It can crystallise in two dimensional sheets which can be thinned down to monolayers that are flexible and almost transparent. It is a

Tungsten(IV) telluride (WTe2) is an inorganic semimetallic chemical compound. The resistance is proportional to the square of the magnetic field. This may be due to the material being the first example of a compensated semimetal, in which the number of mobile holes is the same as the number of elect

Zinc telluride is a binary chemical compound with the formula ZnTe. This solid is a semiconductor material with a direct band gap of 2.26 eV. It is usually a P-type semiconductor. Its crystal structure is cubic, like that for sphalerite and diamond. Material Notes Zinc Telluride Sputtering Target, P