AZO (Al2O3/ZnO) Sputtering Targets

AEM Deposition specializes in producing high purity Aluminum-doped Zinc Oxide (AZO) Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment.
 

Material Notes

The purity of AZO Sputtering Targets provided by AEM Deposition is 99%, 99.9%, and 99.99%.

Circular: Diameter <= 14inch, Thickness >= 1mm;
Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm.

Except any size rectangular sputtering targets, we can also provide annular sputtering targets, rotary sputtering targets or oval sputtering targets. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. Target bonding service is also provided, including Indium Metallic Bonding and Epoxy Bonding.
 

Deposition Procedure

Dependent on process. AZO films can be deposited by RF or DC magnetron sputtering, but not by thermal evaporation. If the sputter target is non-conducting, as with a ceramic composition, RF sputter techniques are necessary; otherwise reactive DC magnetron sputtering is preferred. 

Target power density ~3-4 W/cm2 with an O2 to Ar flow rate ~2:1.
Operating total pressure ~6 mTorr.
Substrate temperature near 200° C.
Higher power and greater thicknesses produce lower sheet resistances.

Dependent on process. AZO films can be deposited by RF or DC magnetron sputtering, but not by thermal evaporation. If the sputter target is non-conducting, as with a ceramic composition, RF sputter techniques are necessary; otherwise reactive DC magnetron sputtering is preferred.