Indium Oxide (In2O3) Sputtering Targets
Indium(III) oxide (In2O3) is a chemical compound, an amphoteric oxide of indium. Highly transparent and conductive In2O3–ZnO films have been prepared by rf magnetron sputtering using targets composed of In2O3 and ZnO. The etching rate of In2O3–ZnO films when using HCl as the etchant could be controlled by the Zncontent in the films.
Material Notes
Indium Oxide Sputtering Targets, Purity is 99.99%; Circular: Diameter <= 14inch, Thickness >= 1mm; Block: Length <= 32inch, Width <= 12inch, Thickness >= 1mm. Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity.This material may require special ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock.