Oxide Targets

Cupric oxide (CuO) is a p-type semiconductor having a band gap of 1.211.51 eV and monoclinic crystal structure. In recent years, copper-oxide-based materials have found applications in various areas including heterogeneous catalysis, gas sensing, superconducting, and solar energy conversion. Copper

General Dysprosium Oxide (Dy2O3) is a white, slightly hygroscopic powder having specialized uses in ceramics, glass, phosphors, lasers and dysprosium metal halide lamps. Material Notes Dysprosium Oxide Sputtering Targets, Purity is 99.9%;Circular: Diameter = 14inch, Thickness = 1mm; Block: Length =

General Erbium(III) oxide, is synthesized from the lanthanide metal erbium. It was partially isolated by Carl Gustaf Mosander in 1843, and first obtained in pure form in 1905 by Georges Urbain and Charles James. It has a pink color with a cubic crystal structure. Under certain conditions erbium oxid

General Europium(III) oxide (Eu2O3), is a chemical compound of europium and oxygen. It is widely used as a red or blue phosphor in television sets and fluorescent lamps, and as an activator for yttrium-based phosphors. It is also an agent for the manufacture of fluorescent glass. Europium fluorescen

Material Notes Gadolinium Oxide Sputtering Targets, Purity is 99.99%;Circular: Diameter = 14inch, Thickness = 1mm; Block: Length = 32inch, Width = 12inch, Thickness = 1mm.

AEM Deposition is a professional distributor of GZO sputter targets and other rare elements products. Typical purity for ZnO/Ga2O3 targets are 99.9% ~ 99.99%. GZO is a common material and a routinely made sputter target for us. We are proud to claim the due to the large scale equipment recently onli

General Hafnium(IV) oxide is the inorganic compound with the formula HfO2. Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that giv

Indium Gallium Zinc Oxide (IGZO)is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O), High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition m

Indium(III) oxide (In2O3) is a chemical compound, an amphoteric oxide of indium. Highly transparent and conductive In2O3ZnO films have been prepared by rf magnetron sputtering using targets composed of In2O3and ZnO. The etching rate of In2O3ZnO films when using HCl as the etchant could be controlled

Iron oxides are chemical compounds composed of iron and oxygen. All together, there are sixteen known iron oxides and oxyhydroxides.Iron oxides and oxide-hydroxides are widespread in nature, play an important role in many geological and biological processes, and are widely used by humans, e.g., as i

Iron Oxide are chemical compounds composed of iron and oxygen . All together, there are sixteen known iron oxides and oxyhydroxides. Iron oxides and oxide-hydroxides are widespread in nature, play an important role in many geological and biological processes, and are widely used by humans, e.g., as

Lanthanum Aluminate Sputtering Targets, Purity is 99.9%; Circular: Diameter = 14inch, Thickness = 1mm; Block: Length = 32inch, Width = 12inch, Thickness = 1mm. Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness an

Material Notes Lanthanum Manganate Sputtering Targets, Purity is 99.9%; Circular: Diameter = 14inch, Thickness = 1mm; Block: Length = 32inch, Width = 12inch, Thickness = 1mm.

Lanthanum Nickel Oxide Sputtering Targets, Purity is 99.9%;Circular: Diameter = 14inch, Thickness = 1mm; Block: Length = 32inch, Width = 12inch, Thickness = 1mm.

Lanthanum oxide is La2O3, an inorganic compound containing the rare earth element lanthanum and oxygen. It is used to develop ferroelectric materials, as a component of optical materials, and is a feedstock for certain catalysts. Material Notes Lanthanum Oxide Sputtering Targets, Purity is 99.9%;Cir

Applications Ferroelectric Gate Dielectric For CMOS Features High purity Custom Sizes Available Manufacturing Process Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate Cleaning and final packaging, Cleaned for use in vacuum, Protection from environmental contaminants Protect

Applications Ferroelectric Gate Dielectric For CMOS Features High purity Custom Sizes Available Manufacturing Process Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate Cleaning and final packaging, Cleaned for use in vacuum, Protection from environmental contaminants Protect

Applications Ferroelectric Gate Dielectric For CMOS Features High purity Custom Sizes Available Manufacturing Process Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate Cleaning and final packaging, Cleaned for use in vacuum, Protection from environmental contaminants Protect

Applications Ferroelectric Gate Dielectric For CMOS Features High purity Custom Sizes Available Manufacturing Process Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate Cleaning and final packaging, Cleaned for use in vacuum, Protection from environmental contaminants Protect

Applications Ferroelectric Gate Dielectric For CMOS Features High purity Custom Sizes Available Manufacturing Process Manufacturing - Cold pressed - Sintered, Elastomer bonded to backing plate Cleaning and final packaging, Cleaned for use in vacuum, Protection from environmental contaminants Protect